a, b Linewidth FWHM of the III-V/SiN QD laser as a function of the injection current density for different QD layers (a) and QD densities (b). c, d Colormaps of the output power (left) and wall-plug performance (right) as functions of the QD layers (c) and QD density (d). Credit: Emad Alkhazraji, Weng W. Chow, Frédéric Grillot, John E. Bowers, and Yating Wan
New Study Explores Quantum Well and Quantum Dot Devices
A research study just recently released in the journal Light Science & & Application dove into a parametric investigation of the design of the active medium of composite cavity lasers. This research study was headed by Professor Yating Wan from the Integrated Photonics Lab at King Abdullah University of Science and Technology (KAUST), Saudi Arabia, Dr. Weng W. Chow from Sandia National Laboratories, Albuquerque, USA, Prof. Frédéric Grillot from LTCI, Télécom Paris, Institut Polytechnique de Paris, France, and Prof. John Bowers from the University of California Santa Barbara, USA.
Their particular emphasis was on emission spectral improvement, or linewidth narrowing, when incorporating III-V QW or QD distributed feedback (DFB) lasers with SiN microring resonators. “When effectively tuned and locked to one or more of the microrings whispering gallery modes, optical feedback in the form of Rayleigh backscattering can make it possible for extreme decreases in the lasing linewidth of a laser diode to the Hz-level,” Alkhazraji explained.
It reveals the 4D style area and the ideal points for each gadget. Credit: Emad Alkhazraji, Weng W. Chow, Frédéric Grillot, John E. Bowers, and Yating Wan
Findings and Implications for Future Design
The parametric examination was concluded with a multi-objective design-operation optimization analysis of both QW and QD devices by means of a genetic algorithm. A multi-decision algorithm was then used to figure out the optimum design-operation points for each optimization variable.
” These findings provide guidance for more detailed parametric studies that can produce timely results for engineering style,” Professor Yating Wan concluded. The research study highlights the potential for improvement and more advancements in the field of laser diode innovation.
Referral: “Linewidth narrowing in self-injection-locked on-chip lasers” by Emad Alkhazraji, Weng W. Chow, Frédéric Grillot, John E. Bowers and Yating Wan, 28 June 2023, Light Science & & Applications.DOI: 10.1038/ s41377-023-01172-9.
Financing: Advanced Research Projects Agency-Energy (ARPA-E), the U.S. Department of Energy, the American Institute for Manufacturing (AIM) Integrated Photonics.
They are comprised of III-V QW/QD DFB lasers and SiN microring resonators. Credit: Emad Alkhazraji, Weng W. Chow, Frédéric Grillot, John E. Bowers, and Yating Wan
Quantum well (QW) and quantum dot (QD) semiconductor materials-based laser diodes integrated with SiN microresonators show appealing capacity due to their high power efficiency and compact size. A study led by Professor Yating Wan checked out these composite cavity lasers design and functionality, using valuable insights for future laser diode technology development.
Quantum Dot and Quantum Well Laser Diodes: The Future of Microresonators
Quantum well (QW) and quantum dot (QD) semiconductor materials-based on-chip laser diodes are now primary candidates in numerous applications. Their appealing features include high power efficiency, the capability to operate at heats, and compact size. While QWs have been widely executed in industrial products, QDs, with their unique zero-dimensional density of states and atom-like degeneracy, are an appealing alternative.
The heterogeneous integration of III-V lasers with silicon nitride (SiN) microresonators, helped with by self-injection locking, includes intrinsic benefits. These include compactness, high-volume production capacity, and boosted stability. This technology allows for exceptional linewidth narrowing performance compared to III-V lasers grown on native platforms.
Their particular emphasis was on emission spectral improvement, or linewidth narrowing, when integrating III-V QW or QD dispersed feedback (DFB) lasers with SiN microring resonators. “When appropriately tuned and locked to one or more of the microrings whispering gallery modes, optical feedback in the kind of Rayleigh backscattering can allow drastic reductions in the lasing linewidth of a laser diode to the Hz-level,” Alkhazraji discussed.
Quantum well (QW) and quantum dot (QD) semiconductor materials-based on-chip laser diodes are now main prospects in various applications. The heterogeneous integration of III-V lasers with silicon nitride (SiN) microresonators, assisted in by self-injection locking, adds intrinsic benefits. This technology allows for superior linewidth narrowing performance compared to III-V lasers grown on native platforms.